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Power Semiconductor Modules with High-k Dielectric SiC MOSFETs for Low to High Voltage

Monday, November 14, 2022

Today, power electronics is undergoing an exciting and profound technological shift driven by the steadily growing demand for energy. SiC MOSFETs have entered the power devices arena and are the frontrunners to replace traditional Si IGBT technology due to their higher breakdown voltage and thermal conductivity. Despite their successful market entry in e-mobility, several challenges connected to the state-of-the-art gate stack technology must be resolved to exploit the enormous potential of SiC power MOSFETs fully. Conventional SiO2 gate oxides, for example, suffer from poor oxide/SiC interface quality and intense electric fields across the gate oxide that negatively impact device performance and reliability.

At Hitachi Energy, we have developed a MOS gate stack technology based on high-k dielectrics that offer higher drain currents and lower on-state resistances (RON), a key static device characteristic to reduce conduction losses in several applications. Furthermore, the developed high-k dielectric gate stacks exhibit a remarkably high interface quality resulting in a significantly improved threshold voltage stability during static and dynamic switching.

This increased reliability is the differentiating factor for introducing SiC in applications that require higher voltage levels, such as traction, renewable energy or industrial applications.

Key Takeaways

  • Explore the use of high-k as a key differentiator for the reliability of SiC gate stack
  • Improve system performance using high-k SiC power modules
  • Examine the use of SiC for traction, renewables, and industrial applications
Hitachi Energy
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