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GaN Power Transistor Test/Evaluation
From GaN Systems

In Stock: New 650V GaN High Power IMS3 Half-Bridge Evaluation Board

Mfg Part No: GS-EVB-IMS3-0650603B-GS

This horizontal Insulated Metal Substrate (IMS3) evaluation platform can be used to evaluate the electrical and thermal performance benefits of GaNPX® bottom-side cooled E-modes in high power applications. The optimized thermal and electrical designs provide an excellent reference for implementinga low cost, high performance design.

  • Improved heat transfer
  • Increased power density
  • Reduced system cost
  • High thermal conductivity (7.0 W/mK)
  • IMS3 half bridge power boards are available in 2 power levels: 3 kW and 6 kW
  • Automotive: 3.3kW-22kW on board charger, DC/DC, 3-phase inverter, high power wireless charger
  • Industrial: 3-7kW Photovoltaic Inverter and Energy Storage System (ESS), Motor Drive / VFD
  • Server/Datacenter: 3kW Server ACDC power supply.
  • Consumer: Residential Energy Storage System (ESS)

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.