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GaN Systems - GS-EVB-HB-06506
Supports high-power wireless charger, industrial and consumer applications

GS-EVM-CHG-100W: Charger Reference Design for Consumer Electronics

Mfg Part No: GS-EVM-CHG-100WPFCQR-GS1

Note: Reference Design – Documentation Only

This GaN based 100W charger reference design provides a turn-key solution for the “100W, Multiple-ports” growing demand of consumer electronics industry. It displays outstanding performance, and best-in-class features of ultra-high-power density, high efficiency, and low surface temperature. This reference design is based on GaN Systems GaN transistors GS-065-011-1-L. The combined advantages of these transistors of low gate charge, low parasitic capacitor, and low on-state resistor lead to a more efficient system, demonstrating the benefits of GaN technology and meeting high power density without sacrificing the efficiency and thermal performance.

  • Input: 90-264V, 50/60Hz
  • Output: maximum of 100W, 5V3A / 9V3A / 12V3A / 15V3A / 20V5A
  • Case Dimension: (2.4inch x 2.4incg x 1.1 inch)
  • Flexible and smart power distribution
  • Dual USB-C ports to support universal USB-C protocols and flexible plug-in end devices
  • Supports most PD protocols including PD3.0/PD2.0, PPS, QC4.0+/QC4.0/QC3.0/QC2.0, AFC, FCP, SCP, PE2.0/PE1.1, SFCP, Low voltage direct charging and BC1.2 DCP
  • Three main power conversion stages topology : Low Cost CrM PFC – QR synchronous Flyback – and Buck DC/DC converters.
  • Foldable input prong
  • Ultra-high-cased power density: > 16W/in3 (100cc)
  • Peak efficiency > 92.5%
  • Average efficiency exceeds CoC Ver5 2019/1782 standard requirement
  • Standby power exceeds the CoC Ver5 2019/1782 standard requirement with < 200mW. EMI standard: Pass EN55032 Class B with >6dB margin
  • Thermal: Meets the IEC 62368-1 touch temperature requirement
  • With the CrM PFC stage, it achieves high power factor and meets the IEC 61000-3-2 total harmonic distortion standard
  • Clean waveforms with comprehensive system protections, such as OVP, OCP, SCP and open loop.

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.