- RFPD
- Energy Storage & Power Conversion
- Energy & Power Evaluation & Reference Products
- NXP – FRDMGD31RPEVM
NXP – FRDMGD31RPEVM
NXP’s FRDMGD31RPEVM is a half-bridge evaluation kit populated with two GD3160 single channel IGBT/SiC MOSFET gate drive devices. The kit includes the Freedom KL25Z microcontroller hardware for interfacing a PC installed with Flex GUI software for communication to the SPI registers on the MC33GD3160 gate drive devices in either daisy chain or standalone configuration.
The GD3160 translator board is used to translate 3.3 V signals to 5.0 V signals between the MCU and MC33GD3160 gate drivers.
FRDMGD31RPEVM originally populated with GD3100, has been updated with GD3160 gate drive devices.
- Features
- Compatible with RoadPak SiC MOSFET module
- Flex GUI available for use with kit
- Daisy chain SPI interface configurability
- Easy to configure jumper options
- SPI configurable register options using Flex GUI
- Double pulse and short circuit evaluations
- Fiber optic connections for external PWM inputs
- Designed to connect to a single phase of a RoadPak SiC MOSFET module for half-bridge evaluations and applications development
- FRDMGD31RPEVM kit contents include:
- Assembled and tested FRDMGD31RPEVM board in an anti-static bag
- 3.3 V to 5.0 V translator board (KITGD316xTREVB) connected to FRDM-KL25Z
- USB cable, type A male/type mini B male, 3 ft
- Quick start guide
Related Content
NXP Half-Bridge Eval Kit Designed to Connect with Wolfspeed’s XM3 SiC MOSFET Module
This is a half-bridge evaluation kit populated with two MC33GD3160 single channel IGBT/SiC MOSFET gate drive devices.
NXP Half-Bridge Evaluation Kit with Single Channel IGBT/SiC Gate Drive Devices
In Stock: NXP Half-bridge evaluation kit with single channel IGBT/SiC gate drive devices
NXP GD3160 Half-Bridge Evaluation Kit
The FRDMGD3160HBIEVM is a half-bridge evaluation kit populated with two GD3160 single channel IGBT/SiC MOSFET gate drive devices.
