April 2016


1200V, 32A, 80mΩ SiC Power MOSFET
Microsemi's APT40SM120J features fast switching with low EMI/RFI, low RDS(on), ultra-low Crss for improved noise immunity, and low gate charge. It is suitable for PFC and other boost converters, buck converter, two- and single-switch forward converter, flyback converter, and inverter applications.

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Hyperabrupt Varactor Diode
MACOM's MAVR-011020-1411 is a high frequency, gallium arsenide (GaAs) flip chip hyperabrupt varactor diode. It offers 0.025pF total capacitance @ 1 MHz/15Vr, a Q factor of 3000, and constant gamma for linear tuning. It is suitable for point-to-point, electronic scanning antenna arrays, EW, and other A&D applications.



Wideband RF Power GaN Transistor
NXP's AFG24S100HR5 125W CW RF power GaN transistor operates from 1 MHz to 2690 MHz and includes input matching for extended bandwidth performance. It is suitable for commercial applications including public mobile radios, emergency service radios, ISM, wideband laboratory amplifiers, and wireless cellular infrastructure.

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2.8–3.2 GHz 50 Watt GaN Amplifier
Qorvo's QPA1000 is a high-power, S-band amplifier that provides greater than +47 dBm of saturated output power and greater than 24 dB of large-signal gain, while achieving more than 58% power added efficiency. Designed for use in commercial and military radar systems, it is matched to 50 ohms, with integrated DC blocking caps on both I/O ports.



Family of Power Amplifiers
This new family of medium PAs from UMS includes the CHA3395-QDG (21-29.5 GHz / +20 dBm medium power amplifier), the CHA3396-QDG (27-33.5 GHz medium power amplifier with 22 dB linear gain and +19 dBm output power), the CHA6356-QXG (21-23.6 GHz with 2W output power and an integrated power detector), and the CHA6362-QXG (17.7-19.7 GHz high power amplifier with 2.5W output power and an integrated power detector).

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UltraCMOS® Quad MOSFET Mixer
Peregrine's PE4152 is a 100-1000 MHz high linearity mixer targeted at LMR and cellular infrastructure. It includes an integrated LO amplifier that allows for LO input drive levels of less than 0 dBm to produce IIP3 values similar to a quad MOSFET array driven with a +15 dBm LO drive.

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Geneva, IL 60134
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