18-31.5 GHz LNA in Plastic Package for Multi-market Applications
MACOM's MAAL-011129 is well suited to diverse receiver applications such as VSAT, point-to-point and 24 GHz ISM. The LNA is fully matched across the band, operates from 18 to 31.5 GHz, and has a typical noise figure of 2.5 dB and gain of 23 dB at 24 GHz.
RF GaN on SiC Power Amplifier IC
The HMC8500PM5E from Analog Devices delivers 10 W (+40 dBm), typical, with up to 55% PAE across an instantaneous bandwidth of 0.01-2.8 GHz, at an input power of +30 dBm. It is suitable for pulsed or CW applications, such as wireless infrastructure, radar and public mobile radios.
Modular SDR Development Kit
Richardon RFPD's ADI-DPD-DEVKIT is a small cell development kit for FDD-LTE Bands 14 and 28. The development kit consists of three boards (DE705, ADRV9375-W/PCBZ and EVAL-TPG-ZYNQ3, as well as documentation and support.
Ultra-Miniature 174-512 MHz Tunable Filter
NewEdge Signal Solutions' SAX270 electronically-tunable bandpass filter is designed for the extended UHF band in tactical communications applications. NewEdge has used a breakthrough approach to achieve the filter’s extremely small size and over-molded plastic packaging.
Integrated Wideband RF Receiver
The ADRV9008-1 dual RF receiver from Analog Devices offers integrated synthesizers and digital signal processing functions. The device delivers a versatile combination of the high performance and low power consumption required by 3G/4G/5G macrocell, FDD and base station applications.
Digital Variable Attenuators
API Weinschel's new 4209 Series of MMIC digital attenuators operates over the 0.1 to 40 GHz frequency range and is available in an attenuation range of 0 to 31.5 dB in 0.5 dB steps. These units can be controlled using parallel (TTL compatible), I2C, SPI, UART or USB interfaces.
High Current (120 A) 100 V GaN E-HEMT
The enhancement mode GaN on Si GS-010-120-1-P from GaN Systems is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. GaNPX® packaging enables low inductance and low thermal resistance in a small package. These features combine to provide very high efficiency power switching.