Richardson RFPD Introduces New DC-8 GHz 1 W GaAs Power Amplifier from Microsemi

Richardson RFPD Introduces New DC-8 GHz 1 W GaAs Power Amplifier from Microsemi

Wideband PA chip maintains flat gain of 17 dB and OIP3 of +43 dBm from DC to 8 GHz

NEWS RELEASE

1950 S. Batavia Avenue, Suite 100
Geneva, IL 60134

P: 630 262 6800

F: 630 262 6850

March 5, 2019 – Geneva, III.:

Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new power amplifier from Microsemi Corporation, a Microchip Company.

The MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from an 11 V supply.

Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications.

The MMA053AA amplifier features compact die size (3 mm x 2.25 mm x 0.07 mm) and I/Os that are internally matched to 50 Ω, facilitating easy integration into multi-chip modules (MCMs).

The MMA053AA’s leading performance capabilities offer customers a way to meet demanding system and module line-up requirements with minimal DC power consumption.

To find more information, or to purchase this product today online, please visit the MMA053AA webpage. The device is also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Microsemi, please visit the Microsemi storefront webpage.

FOR DETAILS CONTACT

DAVE SILVIUS
Director, Strategic Marketing
P: 630 262 6800
dsilvius@richardsonrfpd.com

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