Richardson RFPD Introduces New DC-8 GHz 1 W GaAs Power Amplifier from Microsemi

Richardson RFPD Introduces New DC-8 GHz 1 W GaAs Power Amplifier from Microsemi

Wideband PA chip maintains flat gain of 17 dB and OIP3 of +43 dBm from DC to 8 GHz


1950 S. Batavia Avenue, Suite 100
Geneva, IL 60134

P: 630 262 6800

F: 630 262 6850

March 5, 2019 – Geneva, III.:

Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new power amplifier from Microsemi Corporation, a Microchip Company.

The MMA053AA is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pHEMT distributed power amplifier die that operates between DC and 8 GHz. The amplifier provides 17 dB of gain, +43 dBm output IP3, and +31 dBm of output power at 3 dB compression, while requiring only 410 mA from an 11 V supply.

Gain flatness over the DC to 8 GHz frequency range varies by only ±0.5 dB, making the MMA053AA die ideal for EW, ECM, radar, and test equipment applications.

The MMA053AA amplifier features compact die size (3 mm x 2.25 mm x 0.07 mm) and I/Os that are internally matched to 50 Ω, facilitating easy integration into multi-chip modules (MCMs).

The MMA053AA’s leading performance capabilities offer customers a way to meet demanding system and module line-up requirements with minimal DC power consumption.

To find more information, or to purchase this product today online, please visit the MMA053AA webpage. The device is also available by calling 1-800-737-6937 (within North America); or please find your local sales engineer (worldwide) at Local Sales Support. To learn about additional products from Microsemi, please visit the Microsemi storefront webpage.


Director, Strategic Marketing
P: 630 262 6800

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