Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

GS-065-0xx-1-L available as 3.5 A, 8 A, and 11 A devices

NEWS RELEASE

2001 Butterfield Road, Suite 1800
Downers Grove, IL. 60515

P: 630 262 6800

F: 630 262 6850

March 26, 2019 – Geneva, III.:

Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new family of 650 V GaN E-HEMTs from GaN Systems Inc.

 

The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:

 

  • Industry standard 5 mm x 6 mm PDFN packages
  • Assembly using standard SMT process
  • Scalable: 3.5 A to 11 A in the same footprint
  • Fast, clean switching speed
  • High switching frequency (20 MHz+)
  • Low switching losses
  • Low EMI
  • High efficiency
  • Kelvin sense
  • Zero Qrr
  • Bottom side cooling

FOR DETAILS CONTACT

DAVE ROSSDEUTCHER
Global Product Management Director – Energy & Power
P: 630 262 6800
drossdeutcher@richardsonrfpd.com

Additional key features of the GS-065-0xx-1-L:

Part Number
Voltage
Current RDS(on)
Package/Size (mm)
GS-065-004-1-L
650
3.5 A 500 mΩ
5 x 6 PDFN
GS-065-008-1-L
650
8 A 225 mΩ
5 x 6 PDFN
GS-065-011-1-L
650
11 A 150 mΩ
5 x 6 PDFN

To find more information, or to purchase this product today online, please visit the GS-065-0xx-1-L webpage; or please find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from GaN Systems, please visit the GaN Systems storefront webpage.

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