March 26, 2019 – Geneva, III.:
Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new family of 650 V GaN E-HEMTs from GaN Systems Inc.
The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:
- Industry standard 5 mm x 6 mm PDFN packages
- Assembly using standard SMT process
- Scalable: 3.5 A to 11 A in the same footprint
- Fast, clean switching speed
- High switching frequency (20 MHz+)
- Low switching losses
- Low EMI
- High efficiency
- Kelvin sense
- Zero Qrr
- Bottom side cooling
FOR DETAILS CONTACT
DAVE ROSSDEUTCHER
Global Product Management Director – Energy & Power
P: 630 262 6800
drossdeutcher@richardsonrfpd.com
Additional key features of the GS-065-0xx-1-L:
Part Number | Voltage | Current RDS(on) | Package/Size (mm) |
|---|---|---|---|
GS-065-004-1-L | 650 | 3.5 A
500 mΩ
| 5 x 6 PDFN |
GS-065-008-1-L | 650 | 8 A
225 mΩ
| 5 x 6 PDFN |
GS-065-011-1-L | 650 | 11 A
150 mΩ
| 5 x 6 PDFN |
To find more information, or to purchase this product today online, please visit the GS-065-0xx-1-L webpage; or please find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from GaN Systems, please visit the GaN Systems storefront webpage.
