Wolfspeed supplies LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) and GaN (Gallium Nitride) RF Power Amplifier solutions for a variety of applications ranging from aerospace and defense to cellular infrastructure. GaN HEMT (High-Electron-Mobility Transistor) and LDMOS MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) are voltage controlled field-effect transistors requiring specific bias sequencing to ensure safe operation under the conditions specified within a datasheet.
Related Content
RF Application Notes
High Power SiC MESFET and GaN HEMT Transistors
The objective of this application note is to provide users of Wolfspeed wide bandgap devices with a guideline of the thermal performance of high power SiC MESFET and GaN HEMT transistors. I
June 14, 2021
