- A3G26D055N-100
The A3G26D055N-100 is an orderable reference design for A3G26D055NT4. The A3G26D055NT4 is a 100-2690 MHz, RF power discrete GaN HEMT housed in a DFN 7 x 6.5mm over-molded plastic package. It has an unmatched output allowing for wide frequency range utilization.
The A3G26D055N-100 circuit optimizes the device from 100-2500MHz band, with 12W CW and 11dB gain by utilizing half of the device. The circuit is available for order and the circuit information is available from NXP via license.
- Typical Performance
Circuit Size: 7 cm x 5cm (2.75″x1.97″)
Frequency (MHz) | Pout (W) | Gain (dB) | IRL (dB) | Drain Efficiency (%) | ID (A) | 100 | 14.8 | 11.7 | -2.5 | 85.7 | 0.540 |
|---|---|---|---|---|---|
1000 | 11.9 | 10.7 | -7.9 | 64.4 | 0.580 |
2000 | 11.7 | 10.7 | -5.2 | 54.8 | 0.670 |
2500 | 10.9 | 10.3 | -4.9 | 52.9 | 0.640 |
VDD = 48 Vdc, IDQ = 45 mA (VGG = ~ -2.7 Vdc), Pin = 1 W, CW
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