PE42545 - Reliable SOI Technology

Ultra-wideband • Fast switching & low IL @ 67 GHz • Flip-chip die
RFPD
pSemi – PE42545: UltraCMOS® 9 kHz–67 GHz SP4T Switch

pSemi – PE42545: UltraCMOS® 9 kHz–67 GHz SP4T Switch

The PE42545 is a HaRP™ technology-enhanced reflective SP4T RF switch die that supports a wide frequency range from 9 kHz to 67 GHz. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement (T&M), 5G mmWave, microwave backhaul, radar and satellite communication applications.

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pSemi

PE42545 - pSemi

The PE42545 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology.

Features

  • Wideband support up to 67 GHz
  • Low insertion loss of 2.6 dB @ 45 GHz
  • Fast switching time of 75 ns
  • High input P1dB of 33.5 dBm
  • Low return loss of 20 dB @ 60 GHz
  • -40 °C to +105 °C operating temperature support
  • Package: Flip-chip die

    • Applications

  • Test and measurement (T&M)
  • 5G mmWave
  • Microwave backhaul
  • Radar
  • Satellite communication

    • RF & Microwave Support

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