Wolfspeed offers an extensive portfolio of GaN on SiC power transistors for use in the design of cellular transmitters supporting all global standards and frequency bands. The lineup includes the WS1A3940-V1 (3700-3980 MHz, 39.5 dBm GaN on SiC Power Amplifier Module) and the WSGPA01-V1 (10 W, 5 GHz GaN on SiC General Purpose Power Amplifier).
With over 30 years of wide bandgap materials and product innovation, enabling industry-leading devices that power more and consume less, Wolfspeed is your complete RF system design partner.
3700-3980 MHz, 39.5 dBm GaN on SiC Power Amplifier Module
The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. It is housed in a 6 mm X 6 mm land grid array (LGA) package.
10 W, 5 GHz GaN on SiC General Purpose Power Amplifier
Wolfspeed has recently introduced two new additions to its lineup of GaN RF power devices that are ideal for ultra-broadband amplifier applications that require high reliability and efficiency.