Wolfspeed General Purpose 28 V RF GaN HEMTs

Wolfspeed’s unmatched 28 V RF GaN transistors are suitable for a variety of RF amplifier system requirements. Fabricated from Cree’s ultra-reliable GaN-on-SiC process, consider these wideband transistors for your next project. Available from 15 W to 220 W saturated power, and up to 6 GHz operating frequency, these are basic building blocks for a multitude of RF amplifier lineups. Coupled with the accurate Wolfspeed large signal models, software reference designs, and support from Richardson RFPD, you have everything you need to complete your project on time and under budget.