Gallium nitride high-electron–mobility transistors (HEMTs) are becoming increasingly popular in the world of electronics due to their superior performance over traditional silicon-based transistors. GaN HEMTs can operate at higher switching frequencies, enabling industries to lower the size of electronics used in the system. The superior thermal performance helps them in high-power applications like powertrains for electric vehicles, transmission lines and motor drives.

This application note looks at the types of losses and ways to ensure proper monitoring and analysis of loss distribution in parallel GaN HEMTs.