150 kVA 3-phase SiC Power Stack Reference Design

From Mersen + Microchip
150 kVA 3-phase SiC Power Stack Reference Design

150 kVA 3-phase SiC Power Stack Reference Design

In the defense industry, communication is not just necessary it’s a lifeline. NXP’s RF transistors are proven rugged and reliable in the harshest of environments.

The MMRF5018HSR5 is now in production and available for orders. The new MMRF5018HSR5 wideband RF 125 W CW power transistor is for optimized wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

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Featured Mersen Products

SiC MOSFET Power Module

The “electrification of everything” is driving the need for higher levels of power fidelity. Designers of electric vehicles, commercial transportation, renewable energy, and energy storage systems can benefit from silicon carbide stack solutions that drive performance and cost efficiencies and accelerate time to market by up to six months.

Benefits of a SiC solution include:

  • Quicker time to market
  • Optimal performance and efficiency
  • A proven solution that avoids sourcing individual parts
  • Risk reduction through reliability and accelerated development

Featured Microchip Products

SiC MOSFET Power Module

  • Configuration: phase leg
  • VDSS (V): 1200
  • RDS(on) (mΩ) typical: 4.2
  • Current (A) Tc = 80° C: 394
  • Silicon type: SiC MOSFET
  • Package: D3

AgileSwitch® Gate Driver Core

  • Software configurable +/- Vgs gate voltages
  • Patented augmented switching
  • Patented robust short-circuit protection
  • Advanced monitoring and fault reporting
  • 15 software configurable features
  • Temperature and DC link monitors
  • Up to seven unique fault codes
  • Up to 150 kHz switching

Energy & Power Design Support

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.