A 1.7 kV SiC MOSFET is an excellent choice for using a single-switch flyback topology in an auxiliary power supply application that requires a wide input voltage range. The 1.7 kV breakdown voltage provides sufficient voltage margin for the 1 kV input voltage. The specific on-resistance of a 1.7 kV SiC MOSFET is much lower than that of a high-voltage silicon MOSFET, allowing for a smaller die size and lower on-resistance in the same package. The smaller die size also significantly reduces switching loss. This option allows the user to increase the switching frequency of the auxiliary power supply in order to reduce transformer size and weight.
Auxiliary Power Supply for Industrial and Solar Applications
Features
Applications
Reference Design BOM
The MSC750SMA170 included in this reference design BOM is part of Microchip’s newest family of SiC MOSFET devices. Microchip’s SiC solutions focus on high-performance, helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Part Number | Voltage (V) | Current (A) | Rds(on) (mΩ) | Configuration | Package Type | MSC750SMA170B | 1700 | 7 | 750 | Single SiC MOSFET | TO-247-3L |
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MSC750SMA170SA | 1700 | 6 | 750 | Single SiC MOSFET | D2PAK-7L |
MSC750SMA170S | 1700 | 6 | 750 | Single SiC MOSFET | TO-268 |
MSC750SMA170B4 | 1700 | 7 | 750 | Single SiC MOSFET | TO-247-4L |