Wolfspeed - C3M0075120J
3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package

3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package

Wolfspeed C3M0075120J Silicon Carbide (SiC) Power MOSFET reduces switching losses and minimizes gate ringing. The C3M0075120J MOSFET provides 17ns of turn-on delay time (td(on)), 1200VDS drain-source voltage, and 113.6W of power dissipation.

Wolfspeed Logo
  • C3M™ SiC MOSFET technology
  • Low impedance package with driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency
  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

Related Content

Energy Storage and Power Conversion

Wolfspeed – WAB400M12BM3

SiC in Stock: 1200V, 400A Module in Robust 62mm Package for Industrial Test Equipment, Rail/Traction and EV Charging Infrastructure


Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.