Wolfspeed - C3M0075120J

3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package
3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package

3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package

Wolfspeed C3M0075120J Silicon Carbide (SiC) Power MOSFET reduces switching losses and minimizes gate ringing. The C3M0075120J MOSFET provides 17ns of turn-on delay time (td(on)), 1200VDS drain-source voltage, and 113.6W of power dissipation.

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  • C3M™ SiC MOSFET technology
  • Low impedance package with driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency
  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

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