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Wolfspeed - C3M0075120J

3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package
RFPD
3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package

3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package

  • Mfg Part Number: C3M0075120J

Wolfspeed C3M0075120J Silicon Carbide (SiC) Power MOSFET reduces switching losses and minimizes gate ringing. The C3M0075120J MOSFET provides 17ns of turn-on delay time (td(on)), 1200VDS drain-source voltage, and 113.6W of power dissipation.

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  • Features
  • C3M™ SiC MOSFET technology
  • Low impedance package with driver source pin
  • 7mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant
  • Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency
  • Applications
  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.