Vincotech’s 10-FY12B2A040MR-L387L68 features ultrafast switching with SiC MOSFET and SiC boost diode, and a compact and low inductive design with integrated capacitors.
- Topology: Booster
- Kelvin Emitter for improved switching performance
- Dual Booster
- Bypass Diode
- Integrated DC capacitor
- Temperature sensor
- Chip technology (main switch): SiC MOSFET
- Fast reverse recovery
- High speed SiC-MOSFET technology
- Low on-resistance
- Base isolation Al2O3
- Convex shaped substrate for superior thermal contact
- Thermo-mechanical push-and-pull force relief
- Electrical interconnection: Solder pin
Vincotech – 10-EY124PA016ME
SiC In Stock: 1200V, 16mΩ SiC Module in Compact, Low-inductive Design Vincotech 10-EY124PA016ME-LP49F18T
Free samples available: Vincotech 1200V, 56A SiC Module
Richardson RFPD is over-stocked on this Vincotech Silicon Carbide module and willing to negotiate on pricing to support your requirement.
Enhance your EV Charger
The new flow DUAL SiC E1 and fastPACK SiC E1/E2 have been developed with the aim to make the EV offboard charger designs faster, smaller and more efficient.