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Vincotech - FY12B2A040MR
SiC in Stock: 1200V, 35A Silicon Carbide Power Module, Compact and Low Inductive Design with Integrated Capacitors

flowBOOST 1 dual SiC from Vincotech

Vincotech’s 10-FY12B2A040MR-L387L68 features ultrafast switching with SiC MOSFET and SiC boost diode, and a compact and low inductive design with integrated capacitors.

  • Topology: Booster
  • Kelvin Emitter for improved switching performance
  • Dual Booster
  • Bypass Diode
  • Integrated DC capacitor
  • Temperature sensor
  • Chip technology (main switch): SiC MOSFET
  • Fast reverse recovery
  • High speed SiC-MOSFET technology
  • Low on-resistance
  • Base isolation Al2O3
  • Convex shaped substrate for superior thermal contact
  • Thermo-mechanical push-and-pull force relief
  • Electrical interconnection: Solder pin
  • Solar
  • UPS

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.