Simplify SiC Selection and Evaluation

Featuring the R23C2T25 DC/DC Converter with Asymmetric Regulated Outputs
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High-Isolation DC/DC Converters for Gate Drivers

High-Isolation DC/DC Converters for Gate Drivers

DC/DC converters are often required to provide an isolated asymmetric supply for high-side gate drivers. The simplest (functional) isolation can withstand 1 kVDC for one second. This sounds impressive, but it is often insufficient.

High-side inverters are often floated a few hundred volts with an opto-isolated PWM control, so the gate drivers need an isolated power supply. This isolated supply is typically +15/-9 V for IGBT, +20/-5 V or +15/-3 V for SiC, and +6 V and +9 V for GaN. A typical DC/DC isolation voltage would be at least twice the working voltage, but the high ambient temperature and fast switching edges generated by these high-power transistors additionally stress the insulation barrier.

High Isolation DC/DC Converters from RECOM

RECOM combines the required asymmetric output voltages, high insulation voltage, and low isolation capacitance into one simple DC/DC converter module. Whether IGBT, SiC MOSFET or GaN HEMT, RECOM has the matching drop-in product.

SiC Gate Drivers

Designed for optimal SiC MOSFET performance, RECOM’s RxxP and RA3 series deliver precise asymmetric voltages and high current outputs to power first through third generation WBG devices with efficient, high-speed switching.
SiC Drivers

GaN Gate Drivers

RECOM’s RP, RxxP06S, and RA3 series DC/DC converters deliver high isolation and low capacitance for optimal GaN transistor switching at +6V, with flexible output options—including split +9V for negative gate drive.

GaN Drivers

IGBT Gate Drivers

RECOM’s RH, RV, RP, RGZ, RKZ, and RxxP series DC/DC converters simplify IGBT driver design with asymmetric +15V/-9V outputs, replacing dual converters with a single compact solution—available in multiple pin-outs and packages.

IGBT Drivers

SiC Gate Drivers – High Isolated DC/DC Converters

RECOM’s 2W SiC gate driver DC/DC converters (RKZ, RxxP2xx, RA3, and R24C2T25 and R24C2T25/R series) provide reinforced isolation up to 6.4kVDC/1s and the asymmetric voltages required for efficient SiC MOSFET switching. The RxxP22005D and RKZ-xx2005D series supply +20V/-5V for first-generation devices, while the RxxP21503D series provides +15V/-3V for second-generation SiC MOSFETs. The compact R24C2T25 and R24C2T25/R series add programmable asymmetric outputs in space-saving SMD packages, while the SMD-mount RA3 series offers three voltage combinations with higher current capability to maximize switching performance across multiple SiC generations.

Part Number
Input Voltage (V)
Output Voltage (V)
Output Power (W)
Isolation (kV)
R9C1T18/R
8.5 – 18
Programmable
3
5
R12C2T25/R
9 – 18
Programmable
2.5
5
R12C2T12/R
9 – 18
Programmable
2.5
5
R15C2T25/R
13.5 – 18
Programmable
2.5
5
R24C2T25/R
21 – 27
Programmable
2.5
5
R24C2T25
21 – 27
Programmable
2.5
3
R05P22005D/P
5
20/-5
2
6.4
R12P21503D
12
15/-3
2
6.4
R12P22005D
12
20/-5
2
6.4
R12P22005D/P
12
20/-5
2
6.4
R15P21503D
15
15/-3
2
6.4
R15P22005D
15
20/-5
2
6.4
R15P22005D/P
15
20/-5
2
6.4
R24P21503D
24
15/-3
2
6.4
R24P21503D/P
24
15/-3
2
6.4
R24P22005D
24
20/-5
2
6.4
R24P22005D/P
24
20/-5
2
6.4
RKZ-052005D
5
20/-5
2
3
RKZ-052005D/H
5
20/-5
2
4
RKZ-052005D/HP
5
20/-5
2
4
RKZ-052005D/P
5
20/-5
2
3
RKZ-122005D
12
20/-5
2
3
RKZ-122005D/H
12
20/-5
2
4
RKZ-122005D/HP
12
20/-5
2
4
RKZ-122005D/P
12
20/-5
2
3
RKZ-152005D
15
20/-5
2
3
RKZ-152005D/H
15
20/-5
2
4
RKZ-152005D/HP
15
20/-5
2
4
RKZ-152005D/P
15
20/-5
2
3
RKZ-242005D
24
20/-5
2
3
RKZ-242005D/H
24
20/-5
2
4
RKZ-242005D/HP
24
20/-5
2
4
RKZ-242005D/P
24
20/-5
2
3
RA3-050701D/SMD
5
7/-1
3
5.2
RA3-051503D/SMD
5
15/-3
3
5.2
RA3-051505D/SMD
5
15/-5
3
5.2
RA3-052005D/SMD
5
20/-5
3
5.2
RA3-120701D/SMD
12
7/-1
3
5.2
RA3-121503D/SMD
12
15/-3
3
5.2
RA3-121505D/SMD
12
15/-5
3
5.2
RA3-122005D/SMD
12
20/-5
3
5.2
RA3-240701D/SMD
24
7/-1
3
5.2
RA3-241503D/SMD
24
15/-3
3
5.2
RA3-241505D/SMD
24
15/-5
3
5.2
RA3-242005D/SMD
24
20/-5
3
5.2

GaN Drivers – High Isolated DC/DC Converters

RECOM’s RP-xx06S and RxxP06S DC/DC converters provide +6V with high isolation and low capacitance, making them ideal for high slew-rate GaN transistor drivers. For noisier environments, +9V versions can be split via a Zener to +6V and -3V, ensuring safe negative gate bias at turn-off. The R24C2T25 and R24C2T25/R series introduce compact SMD solutions with programmable asymmetric outputs for precise voltage tailoring in GaN applications. For higher power demands, the SMD-mount RA3 series provides three output options and increased current capability to deliver fast, reliable switching of GaN and other WBG devices.

Part Number
Input Voltage (V)
Output Voltage (V)
Output Power (W)
Isolation (kV)
R9C1T18/R
8.5 – 18
Programmable
3
5
R12C2T25/R
9 – 18
Programmable
2.5
5
R12C2T12/R
9 – 18
Programmable
2.5
5
R15C2T25/R
13.5 – 18
Programmable
2.5
5
R24C2T25/R
21 – 27
Programmable
2.5
5
R24C2T25
21 – 27
Programmable
2.5
3
R05P06S
5
6
1
6.4
R12P06S
12
6
1
6.4
R15P06S
15
6
1
6.4
R24P06S
24
6
1
6.4
RP-0506S
5
6
1
5.2
RP-1206S
12
6
1
5.2
RP-1506S
15
6
1
5.2
RP-2406S
24
6
1
5.2
RA3-050701D/SMD
5
7/-1
3
5.2
RA3-051503D/SMD
5
15/-3
3
5.2
RA3-051505D/SMD
5
15/-5
3
5.2
RA3-052005D/SMD
5
20/-5
3
5.2
RA3-120701D/SMD
12
7/-1
3
5.2
RA3-121503D/SMD
12
15/-3
3
5.2
RA3-121505D/SMD
12
15/-5
3
5.2
RA3-122005D/SMD
12
20/-5
3
5.2
RA3-240701D/SMD
24
7/-1
3
5.2
RA3-241503D/SMD
24
15/-3
3
5.2
RA3-241505D/SMD
24
15/-5
3
5.2
RA3-242005D/SMD
24
20/-5
3
5.2

IGBT Drivers – High Isolated DC/DC Converters

RECOM’s RH, RV, RP, RGZ, RKZ, RxxPxx, RxxP2xx, RA3, R24C2T25 and R24C2T25/R DC/DC converters are designed for IGBT driver circuits, delivering asymmetric outputs of +15V/-9V. This eliminates the need for two separate converters, simplifying designs and saving board space. The SMD-mount RA3 series provides three voltage options with higher output current for faster switching, while the compact R24C2T25/R series in a 36-pin SSOP SMD package offers programmable dual regulated outputs, wide input ranges, reinforced 5kVAC isolation, and integrated protection features—ensuring precise gate drive voltages and reliable operation in IGBT applications.

Part Number
Input Voltage (V)
Output Voltage (V)
Output Power (W)
Isolation (kV)
R9C1T18/R
8.5 – 18
Programmable
3
5
R12C2T25/R
9 – 18
Programmable
2.5
5
R12C2T12/R
9 – 18
Programmable
2.5
5
R15C2T25/R
13.5 – 18
Programmable
2.5
5
R24C2T25/R
21 – 27
Programmable
2.5
5
R24C2T25
21 – 27
Programmable
2.5
3
RGZ-xx1509D
5, 12, 24
15/-9
2
3
RH-xx1509D
5, 12, 24
15/-9
1
3
RKZ-xx1509D
5, 12, 24
15/-9
2
3
RV-xx1509D
5, 12, 24
15/-9
2
6
R05P22005D/P
5
20/-5
2
6.4
R12P21503D
12
15/-3
2
6.4
R12P22005D
12
20/-5
2
6.4
R12P22005D/P
12
20/-5
2
6.4
R15P21503D
15
15/-3
2
6.4
R15P22005D
15
20/-5
2
6.4
R15P22005D/P
15
20/-5
2
6.4
R24P21503D
24
15/-3
2
6.4
R24P21503D/P
24
15/-3
2
6.4
R24P22005D
24
20/-5
2
6.4
R24P22005D/P
24
20/-5
2
6.4
RA3-050701D/SMD
5
7/-1
3
5.2
RA3-051503D/SMD
5
15/-3
3
5.2
RA3-051505D/SMD
5
15/-5
3
5.2
RA3-052005D/SMD
5
20/-5
3
5.2
RA3-120701D/SMD
12
7/-1
3
5.2
RA3-121503D/SMD
12
15/-3
3
5.2
RA3-121505D/SMD
12
15/-5
3
5.2
RA3-122005D/SMD
12
20/-5
3
5.2
RA3-240701D/SMD
24
7/-1
3
5.2
RA3-241503D/SMD
24
15/-3
3
5.2
RA3-241505D/SMD
24
15/-5
3
5.2
RA3-242005D/SMD
24
20/-5
3
5.2

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