DC/DC converters are often required to provide an isolated asymmetric supply for high-side gate drivers. The simplest (functional) isolation can withstand 1kVDC for one second. This sounds impressive; however this is often not sufficient.
High side inverters are often floated a few hundred volts with an opto-isolated PWM control, so the gate drivers need an isolated power supply. This isolated supply is typically +15/-9V for IGBT, +20/-5V or +15/-3V for SiC or +6V and +9V for GaN. A typical DC/DC isolation voltage would be at least twice the working voltage, but the high ambient temperature and fast switching edges generated by these high-power transistors additionally stress the insulation barrier. RECOM combines the required asymmetric output voltages, high insulation voltage and low isolation capacitance into one simple DC/DC converter module. Whether IGBT, SiC MOSFET or GaN HEMT, RECOM has the matching drop-in product.


High isolation 2W DC/DC converters for SiC gate drivers
Recom’s 2W (RKZ and RxxP2xx series) SiC gate driver DC/DC converters provide isolation up to 6.4kVDC/1 sec. They were specifically designed to power gate drivers for SiC MOSFETs requiring +20/-5V or +15/-3V drive levels.
Part Number | Nominal Input Voltage (V) | Output Voltage (V) | Output Power (W) | Isolation (kV) | R05P22005D/P | 5 | 20/-5 | 2 | 6.4 |
---|---|---|---|---|
R12P21503D | 12 | 15/-3 | 2 | 6.4 |
R12P22005D | 12 | 20/-5 | 2 | 6.4 |
R12P22005D/P | 12 | 20/-5 | 2 | 6.4 |
R15P21503D | 15 | 15/-3 | 2 | 6.4 |
R15P22005D | 15 | 20/-5 | 2 | 6.4 |
R15P22005D/P | 15 | 20/-5 | 2 | 6.4 |
R24P21503D | 24 | 15/-3 | 2 | 6.4 |
R24P21503D/P | 24 | 15/-3 | 2 | 6.4 |
R24P22005D | 24 | 20/-5 | 2 | 6.4 |
R24P22005D/P | 24 | 20/-5 | 2 | 6.4 |
RKZ-052005D | 5 | 20/-5 | 2 | 3 |
RKZ-052005D/H | 5 | 20/-5 | 2 | 4 |
RKZ-052005D/HP | 5 | 20/-5 | 2 | 4 |
RKZ-052005D/P | 5 | 20/-5 | 2 | 3 |
RKZ-122005D | 12 | 20/-5 | 2 | 3 |
RKZ-122005D/H | 12 | 20/-5 | 2 | 4 |
RKZ-122005D/HP | 12 | 20/-5 | 2 | 4 |
RKZ-122005D/P | 12 | 20/-5 | 2 | 3 |
RKZ-152005D | 15 | 20/-5 | 2 | 3 |
RKZ-152005D/H | 15 | 20/-5 | 2 | 4 |
RKZ-152005D/HP | 15 | 20/-5 | 2 | 4 |
RKZ-152005D/P | 15 | 20/-5 | 2 | 3 |
RKZ-242005D | 24 | 20/-5 | 2 | 3 |
RKZ-242005D/H | 24 | 20/-5 | 2 | 4 |
RKZ-242005D/HP | 24 | 20/-5 | 2 | 4 |
RKZ-242005D/P | 24 | 20/-5 | 2 | 3 |
DC/DC supplies for GaN technology
GaN devices are set to supersede existing SiC MOSFETs for many applications and reach their optimal performance with a gate switching voltage of +6V from RP-xx06S and RxxP06S DC/DC converter series. In GaN applications where higher noise and interferences have to be considered, RECOM also offers converters with +9V output which can be split up via a Zener diode to +6V and -3V to provide a negative gate voltage on turn-off ensuring that the gate voltage stays below the turn-on threshold.