NEW! Compact 2 W Isolated DC/DC Converter

R24C2T25 from RECOM
High-Isolation DC/DC Converters for Gate Drivers

High-Isolation DC/DC Converters for Gate Drivers

DC/DC converters are often required to provide an isolated asymmetric supply for high-side gate drivers. The simplest (functional) isolation can withstand 1 kVDC for one second. This sounds impressive, but it is often insufficient.

High-side inverters are often floated a few hundred volts with an opto-isolated PWM control, so the gate drivers need an isolated power supply. This isolated supply is typically +15/-9 V for IGBT, +20/-5 V or +15/-3 V for SiC, and +6 V and +9 V for GaN. A typical DC/DC isolation voltage would be at least twice the working voltage, but the high ambient temperature and fast switching edges generated by these high-power transistors additionally stress the insulation barrier.

RECOM combines the required asymmetric output voltages, high insulation voltage, and low isolation capacitance into one simple DC/DC converter module. Whether IGBT, SiC MOSFET or GaN HEMT, RECOM has the matching drop-in product.

High Isolation 2W DC/DC Converters for SiC Gate Drivers

RECOM’s 2 W SiC gate driver DC/DC converters (RKZ and RxxP2xx Series) provide isolation up to 6.4 kVDC/1 sec. They were specifically designed to power gate drivers for SiC MOSFETs requiring +20/-5 V or +15/-3 V drive levels.

The newly released (December 2023) R24C2T25 is a compact 2 W isolated DC/DC converter featuring programmable asymmetrical output voltages to ensure precise control and performance optimization for power electronics applications using either IGBTs or Si or SiC MOSFETs.

Part Number
Nominal Input Voltage (V)
Output Voltage (V)
Output Power (W)
Isolation (kV)
R24C2T25
21-27
Programmable
2
6
R05P22005D/P
5
20/-5
2
6.4
6.4
R12P21503D
12
15/-3
2
6.4
R12P22005D
12
20/-5
2
6.4
R12P22005D/P
12
20/-5
2
6.4
R15P21503D
15
15/-3
2
6.4
R15P22005D
15
20/-5
2
6.4
R15P22005D/P
15
20/-5
2
6.4
R24P21503D
24
15/-3
2
6.4
R24P21503D/P
24
15/-3
2
6.4
R24P22005D
24
20/-5
2
6.4
R24P22005D/P
24
20/-5
2
6.4
RKZ-052005D
5
20/-5
2
3
RKZ-052005D/H
5
20/-5
2
4
RKZ-052005D/HP
5
20/-5
2
4
RKZ-052005D/P
5
20/-5
2
3
RKZ-122005D
12
20/-5
2
3
RKZ-122005D/H
12
20/-5
2
4
RKZ-122005D/HP
12
20/-5
2
4
RKZ-122005D/P
12
20/-5
2
3
RKZ-152005D
15
20/-5
2
3
RKZ-152005D/H
15
20/-5
2
4
RKZ-152005D/HP
15
20/-5
2
4
RKZ-152005D/P
15
20/-5
2
3
RKZ-242005D
24
20/-5
2
3
RKZ-242005D/H
24
20/-5
2
4
RKZ-242005D/HP
24
20/-5
2
4
RKZ-242005D/P
24
20/-5
2
3

DC/DC Supplies for GaN Technology

GaN devices are set to supersede existing SiC MOSFETs for many applications. RECOM’s RP-xx06S and RxxP06S DC/DC converter series offer optimal performance with a gate switching voltage of +6 V. In GaN applications where higher noise and interferences must be considered, RECOM also offers converters with +9 V output that can be split via a Zener diode to +6 V and -3 V to provide a negative gate voltage on turn-off, ensuring that the gate voltage stays below the turn-on threshold.
Part Number
Nominal Input Voltage (V)
Output Voltage (V)
Output Power (W)
Isolation (kV)
R05P06S
5
6
1
6.4
R12P06S
12
6
1
6.4
R15P06S
15
6
1
6.4
R24P06S
24
6
1
6.4
RP-0506S
5
6
1
5.2
RP-1206S
12
6
1
5.2
RP-1506S
15
6
1
5.2

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.