Wolfspeed – CAB320M17XM3

Wolfspeed 1700V, 320A Half-Bridge Silicon Carbide Module

Wolfspeed’s Silicon Carbide Half-Bridge Module boasts high-performance, durability and energy efficiency. Its low on-resistance of 3.5mΩ and high-voltage capabilities enable efficient power transfer, while the use of heat-resistant Silicon Carbide ensures longevity.

Wolfspeed

CAB320M17XM3 from Wolfspeed

1700 V, 3.5 mΩ, Silicon Carbide, Half-Bridge Module

System Benefits

  • Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low-inductance design.
  • Isolated, integrated temperature sensing enables high-level tem- perature protection.
  • Dedicated high-side Kelvin-drain pin enables direct voltage sensing for gate driver overcurrent protection.
  • 1700 VDS allows use with higher bus voltage (typically up to 1.4 kV).
  • Technical Features

  • High Power Density Footprint
  • High Junction Temperature (175 °C) Operation
  • Low-Inductance (6.7 nH) Design
  • Implements Wolfspeed’s Third Generation SiC MOSFET Technology
  • Silicon Nitride Insulator and Copper Baseplate
  • 1700 V Drain-Source Voltage
  • Cross-pin Gate-Source Signal Pinout
  • Targeted Applications

  • Energy
  • Medical
  • Motor & Motion Control
  • Test and Production Equipment
  • Transportation
  • Traction Inverters
  • Energy & Power Design Support

    Allow us an opportunity to assess your project and help bring your vision to market faster.

    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.