Discover Microchip‘s versatile IGBT 7 power modules, offering increased current capability, lower losses and high efficiency in multiple package options. Covering voltages from 1200V to 1700V and currents up to 900A, these modules deliver power, precision and performance for diverse applications.
IGBT 7 Portfolio – Microchip
The new IGBT 7 portfolio is now available in seven packages across 49 parts. These devices feature lower VCE(sat) and Vf, overload capacity at Tj 175°C, 50% higher current capability, enhanced controllability of dv/dt, improved freewheeling diode softness and simpler driving compared to previous legacy generations.
IGBT 7 Power, Performance and Precision
Device Features
- Lower on-state voltage VCE(sat) and Vf
- Overload capability at Tvj,op = 175°C
- Enhanced controllability of dv/dt
- Improved freewheeling diode
- Optimized for simple driving
Application Benefits
- ~50% higher current Vs IGBT4
- Frame size jump
- Reduced need for paralleling
- Fewer EMI issues
- Covers low-to-mid Fsw
- ~15% lower losses Vs IGBT4
Customer Benefits
- High power density
- Reduced system cost
- High-efficiency
- Reliability and durability
- Ease of use
- Faster time-to-market
Additional Resources
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