Wolfspeed - EAB450M12XM3

Automotive-Qualified 1200V, 450A SiC Conduction-Optimized, Half Bridge Module
New from Wolfspeed – EAB450M12XM3

New from Wolfspeed – EAB450M12XM3

Wolfspeed has developed the HM power module platform to provide the benefits of Silicon Carbide in power density sensitive applications, while maintaining the baseplate compatibility of a 62 mm module. The HM platform’s SiC-optimized packaging enables 175°C continuous junction operation, with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The HM3 is a perfect fit for demanding applications such as industrial test equipment, medical power supplies, aerospace and traction drives.

  • High Power Density Footprint
  • High Junction Temperature (175 C) Operation
  • Low Inductance (6.7 nH) Design
  • Implements Conduction Optimized Third Generation SiC MOSFET Technology
  • Silicon Nitride Insulator and Copper Baseplate

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.