Wolfspeed - C6D10065Q-TR

6th Generation 650 V, 10 A Silicon Carbide Schottky Diode
New Product: 6th Generation 650V, 10A SiC Diode in QFN Package

New Product: 6th Generation 650V, 10A SiC Diode in QFN Package

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
  • Zero Reverse Recovery Current / Forward Recovery Voltage
  • Temperature-Independent Switching Behavior
  • Low Profile Package with Low Inductance
  • Enterprise Power, Server, & Telecom Power Supplies
  • Switched Mode Power Supplies
  • Industrial Power Supplies
  • Boost Power Factor Correction
  • Bootstrap Diode
  • LLC Clamping

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.