Wolfspeed - C6D08065Q-TR

6th Generation 650 V, 8 A Silicon Carbide Schottky Diode
SiC in Stock: Wolfspeed 650 V, 8 A in 8×8 QFN Package

SiC in Stock: Wolfspeed 650 V, 8 A in 8×8 QFN Package

Wolfspeed’s Silicon Carbide (SiC) 650V Schottky Diode technology is optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, and consumer electronics.
  • Blocking voltage: 650 V
  • Current rating: 8 A
  • Forward voltage: 1.27 V
  • Maximum continuous current (IF): 8 A
  • Total capacitive charge (QC (typ)): 29 nC
  • Total power dissipation (PTOT): 92 W
  • Package: QFN
  • Qualification: Industrial

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.