Wolfspeed - C3M0015065K

650V, 15mΩ Silicon Carbide MOSFET in 4-lead TO-247 Package
SiC In Stock: Wolfspeed 650V, 15mΩ Silicon Carbide MOSFET

SiC In Stock: Wolfspeed 650V, 15mΩ Silicon Carbide MOSFET

The industry’s lowest on-state resistances and switching losses for maximum efficiency and power density

Wolfspeed extends its SiC technology leadership with the introduction of 3rd-Generation 650V MOSFETs, enabling smaller, lighter and highly-efficient power conversion in an even wider range of power systems. The 650V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies and battery management systems.

  • Blocking voltage: 650 V
  • RDS(ON) at 25° C: 15 mΩ
  • Generation: Gen 3
  • Current rating: 91 A
  • Gate charge total: 188 nC
  • Output capacitance: 289 pF
  • Total power dissipation (PTOT): 416 W
  • Maximum junction temperature: 175 °C
  • Package: TO-247-4

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.