Robust Isolated Gate Drivers

For Silicon MOSFETs, IGBTs, SiC and GaN

The need for robust gate drivers is on the rise. Inverters, converters, and motors require precise gate drive, strong value, and broad flexibility.

Also consider newer power semiconductor technologies such as Silicon Carbide (SiC) and Gallium Nitride (GaN) with their fast switching, low noise, and low losses requiring specialized drive circuitry.

As a design engineer, you understand the need for drivers that:

  • Provide high current drive
  • Tightly control propagation delay
  • Are highly noise immune
  • Offer flexible package options

Skyworks’ Si82Ax-Fx families provide all this and more.

Skyworks

Single and Dual-Channel High Performance Isolated Gate Drivers from Skyworks

Skyworks’ Si82Ax-Fx product families include Si82Ax, Si82Bx, Si82Cx, Si82Dx, Si82Ex, and Si82Fx.

– Voltage mode drive
– Universal input
– Complimentary inputs
– 1A indirect drive

– Voltage mode drive
– Universal input
– Deglitch Filters
– 6A peak output
– Miller Clamp

– SelVCD™
– Miller Clamp
– Deglitch Filters
– 4A peak output

– Voltage mode drive
– Dual universal inputs
– Deglitch Filters
– 1A indirect drive

– Voltage mode drive
– Dual universal inputs
– Deglitch Filters
– 6A peak output

– SelVCD™
– Miller Clamp
– Deglitch Filters
– 4A peak output

Next-Generation Si82xx IsoDrivers (Ideal for MOSFETs, IGBTs, & SiC Devices)

Features

  • CMOS input with de-glitch filter
  • 10kV bi-polar surge (IEC60747-17)
  • 200 kV/μs CMTI
  • <45 ns propagation delay
  • 5 – 8 ns skew (part-to-part, or channel-to channel)
  • Support for GaN, IGBT, SiC, MOSFET
  • Up-to 6 kVRMS isolation rating
  • 1500 VRMS working voltage
  • Safe output state when unpowered
  • Gate short-circuit protection
  • Thermal shutdown
  • Improved ESD clamp
  • Negative I/O transient tolerance

Applications

  • Si MOSFET & IGBT gate drive
  • Recommended for SiC FETs
  • AC/DC converters
  • DC/DC converters
  • Class D amplifiers
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Energy & Power Design Support

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.