New Isolated Gate Driver Solutions

For Silicon MOSFETs, IGBT, SiC and GaN
Skyworks 2-Channel High Performance Isolated Gate Drivers

Skyworks 2-Channel High Performance Isolated Gate Drivers

Performance of a switching circuit, from a customer’s perspective, involves current and voltage of the gate drive. Either they try to switch faster (reduce the “t” in dV/dt) to minimize switching losses to increase efficiency and reduce magnetics sizes, or they switch slower to reduce emissions.

With the market migrating to wide-bandgap devices (SiC and GaN), this new high-performance driver offers a collection of features associated with controlling the switching speed to optimize efficiency, emissions, and system magnetics requirements.

Contact Richardson RFPD for Details & Availability

Si82Fx Diagram

2-Channel High Performance Isolated Gate Drivers from Skyworks

Skyworks

Both the Si82Ex and Si82Fx series are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET, IGBT, SiC, and GaN. With outstanding isolation ratings of up to 6kV and compliance to VDE 60747-17, AEC-Q100 qualifications and automotive-grade options, and a variety of popular packaging options, these device families have a match for your isolated gate drive needs.

Si82Ex

All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, dual channels with universal or high-side/low-side configuration, and assorted UVLOs suitable for the power switch type being driven.

Si82Fx

PAll devices in this family include the revolutionary SelVCDTM (superscript TM) current mode architecture with a variety of CMOS inputs with deglitch options, dual channels with universal or high-side/low-side configuration, and assorted UVLOs suitable for the power switch type being driven.

Si82Fx -  Ideal for MOSFETs, IGBTs, & SiC Devices

Features

  • VDDI: 3.0-20 V
  • VDDA/B: 4.5-30 V
  • CMOS input thresholds
  • Selectable deglitch filter
  • Deadtime control & overlap protection
  • Dual (HI/LO) or PWM option
  • 4A precise constant current drive with integrated Miller clamp
  • CMTI: Min. 150 kV/µs
  • 1500 VRMS working voltage
  • UVLO options: 4 V, 8 V, 12 V, 15 V
  • Over-temp protection for safety
  • Improved ESD: 7 kV HBM / 1.5 kV CDM
  • Driver short circuit detection & clamp
  • Safe output state when unpowered
  • Increased channel to channel creepage
  • Isolation: 6 kVRMS & 10 kV bipolar surge (IEC60747-17 reinforced)
  • NB SOIC-16, WB SOIC-14, LGA-13 packages

Applications

  • Si MOSFET & IGBT gate drive
  • Recommended for SiC FETs
  • AC/DC converters
  • DC/DC converters
  • Class D amplifiers

Energy & Power Design Support

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.