Performance of a switching circuit, from a customer’s perspective, involves current and voltage of the gate drive. Either they try to switch faster dV/dt to minimize switching losses to increase efficiency and reduce magnetics sizes, or they switch slower to reduce emissions.
With the market migrating to wide-bandgap devices (SiC and GaN), this new high-performance driver offers a collection of features associated with controlling the switching speed to optimize efficiency, emissions, and system magnetics requirements.
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Si82Fx Diagram
2-Channel High Performance Isolated Gate Drivers from Skyworks
Both the Si82Ex and Si82Fx series are isolated gate drive solutions for power switch driving needs, including Silicon MOSFET, IGBT, SiC, and GaN. With outstanding isolation ratings of up to 6kV and compliance to VDE 60747-17, AEC-Q100 qualifications and automotive-grade options, and a variety of popular packaging options, these device families have a match for your isolated gate drive needs.
Si82Ex
Skyworks
All devices in this family include proven voltage mode gate drive architectures with a variety of CMOS inputs with deglitch options, dual channels with universal or high-side/low-side configuration, and assorted UVLOs suitable for the power switch type being driven.
Si82Fx
Skyworks
PAll devices in this family include the revolutionary SelVCD™ current mode architecture with a variety of CMOS inputs with deglitch options, dual channels with universal or high-side/low-side configuration, and assorted UVLOs suitable for the power switch type being driven.
Si82Fx - Ideal for MOSFETs, IGBTs, & SiC Devices
Features
- VDDI: 3.0-20 V
- VDDA/B: 4.5-30 V
- CMOS input thresholds
- Selectable deglitch filter
- Deadtime control & overlap protection
- Dual (HI/LO) or PWM option
- 4A precise constant current drive with integrated Miller clamp
- CMTI: Min. 150 kV/µs
- 1500 VRMS working voltage
- UVLO options: 4 V, 8 V, 12 V, 15 V
- Over-temp protection for safety
- Improved ESD: 7 kV HBM / 1.5 kV CDM
- Driver short circuit detection & clamp
- Safe output state when unpowered
- Increased channel to channel creepage
- Isolation: 6 kVRMS & 10 kV bipolar surge (IEC60747-17 reinforced)
- NB SOIC-16, WB SOIC-14, LGA-13 packages
Applications
- Si MOSFET & IGBT gate drive
- Recommended for SiC FETs
- AC/DC converters
- DC/DC converters
- Class D amplifiers
