Wolfspeed 650V MOSFETs

From Wolfspeed

Wolfspeed 650V MOSFETs

Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion.

Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.

Compared with Silicon, Wolfspeed’s 650V SiC MOSFETs enable:

Benefits

  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size, weight and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
  • Features

  • Low on-state resistance over temperature
  • Low parasitic capacitance
  • Fast diode with ultra-low reverse recovery
  • High temperature operation (TJ = 175 °C)
  • Kelvin source pin
  • Industry standard through-hold & SMT packages
  • Wolfspeed Featured Products

    Part Number
    Blocking Voltage (V)
    RDS(on)(mΩ)
    (ID) @ 25°C (A)
    Package
    Samples
    C3M0015065K
    650
    15 mΩ
    120
    TO-247-4
    Request Sample
    C3M0015065D
    650
    15 mΩ
    120
    TO-247-3
    Request Sample
    C3M0025065D
    650
    25 mΩ
    97
    TO-247-3
    Request Sample
    C3M0025065K
    650
    25 mΩ
    97
    TO-247-4
    Request Sample
    C3M0045065K
    650
    45 mΩ
    49
    TO-247-4
    Request Sample
    C3M0060065K
    650
    60 mΩ
    37
    TO-247-4
    Request Sample
    C3M0060065D
    650
    60 mΩ
    37
    TO-247-3
    Request Sample
    C3M0060065J
    650
    60 mΩ
    37
    TO-263-7
    Request Sample
    C3M0120065D
    650
    120 mΩ
    22
    TO-247-3
    Request Sample
    C3M0120065K
    650
    120 mΩ
    22
    TO-247-4
    Request Sample
    C3M0120065J
    650
    120 mΩ
    21
    TO-263-7
    Request Sample

    Wolfspeed 650V MOSFETs:  Associated Products

    C5D50065D

    Wolfspeed

    50A, 650V SiC Schottky Diode
    TO-247-3 Package

    Pairing Wolfspeed SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

    650V SiC Schottky Diodes

    Wolfspeed

    6th Generation

    The latest C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction of conduction losses, which further enable extremely high system level efficiency and power density in the most demanding power conversion applications.

    ADUM4121-1CRIZ

    Analog Devices

    High-voltage, Isolated Gate Driver with internal Miller clamp 2A output, 11.3V UVLO

    The ADuM4121-1CRIZ is a 2A isolated, single-channel driver employing Analog Devices’ iCoupler® technology to provide precision isolation.

    CRD-06600FF065N

    Wolfspeed

    6.6 kW High Power Density Bi-Directional
    EV On-Board Charger

    The demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC stage based on a CLLC topology with quasi-constant DC link voltage.

    KIT-CRD-3DD065P

    Wolfspeed

    KIT-CRD-3DD065P

    Evaluate and optimize the steady state and high speed dynamic switching performance of Wolfspeed’s latest (C3M) 650 V SiC MOSFETs and 6th Generation (C6D) 650 V SiC Schottky diodes.

    CRD-02AD065N

    Wolfspeed

    2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET

    Reference design offers a highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on 650 V 60 mΩ SiC MOSFETs.

    CRD-06600FF065N

    Wolfspeed

    6.6 kW High Frequency DC-DC Converter

    The demo board consist of a DC-DC LLC topology in which primary side is based on a Full bridge stage while the secondary side is based on an asynchronous rectification stage.

    Energy & Power Design Support

    Allow us an opportunity to assess your project and help bring your vision to market faster.

    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.