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Wolfspeed 650V MOSFETs
From Wolfspeed

Wolfspeed 650V MOSFETs

Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion.

Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.

Compared with Silicon, Wolfspeed’s 650V SiC MOSFETs enable:

  • Improves system efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves system level power density
  • Reduces system size, weight and cooling requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
  • Low on-state resistance over temperature
  • Low parasitic capacitances
  • Fast diode with ultra-low reverse recovery
  • High temperature operation (TJ = 175 °C)
  • Kelvin source pin
  • Industry standard through-hold & SMT packages

Wolfspeed Featured Products

Part Number
Blocking Voltage (V)
RDS(on)(mΩ)
(ID) @ 25°C (A)
Package
Samples
C3M0015065K
650
15 mΩ
120
TO-247-4
Request Sample
C3M0015065D
650
15 mΩ
120
TO-247-3
Request Sample
C3M0025065D
650
25 mΩ
97
TO-247-3
Request Sample
C3M0025065K
650
25 mΩ
97
TO-247-4
Request Sample
C3M0045065K
650
45 mΩ
49
TO-247-4
Request Sample
C3M0060065K
650
60 mΩ
37
TO-247-4
Request Sample
C3M0060065D
650
60 mΩ
37
TO-247-3
Request Sample
C3M0060065J
650
60 mΩ
37
TO-263-7
Request Sample
C3M0120065D
650
120 mΩ
22
TO-247-3
Request Sample
C3M0120065K
650
120 mΩ
22
TO-247-4
Request Sample
C3M0120065J
650
120 mΩ
21
TO-263-7
Request Sample

Wolfspeed 650V MOSFETs:  Associated Products

C5D50065D

Wolfspeed

50A, 650V SiC Schottky Diode
TO-247-3 Package

Pairing Wolfspeed SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

650V SiC Schottky Diodes

Wolfspeed

6th Generation

The latest C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction of conduction losses, which further enable extremely high system level efficiency and power density in the most demanding power conversion applications.

ADUM4121-1CRIZ

Analog Devices

High-voltage, Isolated Gate Driver with internal Miller clamp 2A output, 11.3V UVLO

The ADuM4121-1CRIZ is a 2A isolated, single-channel driver employing Analog Devices’ iCoupler® technology to provide precision isolation.

CRD-06600FF065N

Wolfspeed

6.6 kW High Power Density Bi-Directional
EV On-Board Charger

The demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC stage based on a CLLC topology with quasi-constant DC link voltage.

KIT-CRD-3DD065P

Wolfspeed

KIT-CRD-3DD065P

Evaluate and optimize the steady state and high speed dynamic switching performance of Wolfspeed’s latest (C3M) 650 V SiC MOSFETs and 6th Generation (C6D) 650 V SiC Schottky diodes.

CRD-02AD065N

Wolfspeed

2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET

Reference design offers a highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on Cree’s latest (C3M™) 650 V 60 mΩ SiC MOSFETs.

CRD-06600FF065N

Wolfspeed

6.6 kW High Frequency DC-DC Converter

The demo board consist of a DC-DC LLC topology in which primary side is based on a Full bridge stage while the secondary side is based on an asynchronous rectification stage.

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.