Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion.
Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.
Compared with Silicon, Wolfspeed’s 650V SiC MOSFETs enable:
- 75% Lower Switching Losses
- 1/2 Conduction Losses
- 3x Higher Power Density
- Key Benefits
- Improves system efficiency with lower switching and conduction losses
- Enables high switching frequency operation
- Improves system level power density
- Reduces system size, weight and cooling requirements
- Enables new hard switching topologies (Totem-Pole PFC)
- Key Features
- Low on-state resistance over temperature
- Low parasitic capacitances
- Fast diode with ultra-low reverse recovery
- High temperature operation (TJ = 175 °C)
- Kelvin source pin
- Industry standard through-hold & SMT packages
Wolfspeed Featured Products
Part Number | Blocking Voltage (V) | RDS(on)(mΩ) | (ID) @ 25°C (A) | Package | Samples | C3M0015065K | 650 | 15 mΩ | 120 | TO-247-4 | Request Sample |
|---|---|---|---|---|---|---|
C3M0015065D | 650 | 15 mΩ | 120 | TO-247-3 | Request Sample | |
C3M0025065D | 650 | 25 mΩ | 97 | TO-247-3 | Request Sample | |
C3M0025065K | 650 | 25 mΩ | 97 | TO-247-4 | Request Sample | |
C3M0045065K | 650 | 45 mΩ | 49 | TO-247-4 | Request Sample | |
C3M0060065K | 650 | 60 mΩ | 37 | TO-247-4 | Request Sample | |
C3M0060065D | 650 | 60 mΩ | 37 | TO-247-3 | Request Sample | |
C3M0060065J | 650 | 60 mΩ | 37 | TO-263-7 | Request Sample | |
C3M0120065D | 650 | 120 mΩ | 22 | TO-247-3 | Request Sample | |
C3M0120065K | 650 | 120 mΩ | 22 | TO-247-4 | Request Sample | |
C3M0120065J | 650 | 120 mΩ | 21 | TO-263-7 | Request Sample |
Wolfspeed 650V MOSFETs: Associated Products
C5D50065D
Wolfspeed
50A, 650V SiC Schottky Diode
TO-247-3 Package
Pairing Wolfspeed SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.
650V SiC Schottky Diodes
Wolfspeed
6th Generation
The latest C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction of conduction losses, which further enable extremely high system level efficiency and power density in the most demanding power conversion applications.
ADUM4121-1CRIZ
Analog Devices
High-voltage, Isolated Gate Driver with internal Miller clamp 2A output, 11.3V UVLO
The ADuM4121-1CRIZ is a 2A isolated, single-channel driver employing Analog Devices’ iCoupler® technology to provide precision isolation.
CRD-06600FF065N
Wolfspeed
6.6 kW High Power Density Bi-Directional
EV On-Board Charger
The demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC stage based on a CLLC topology with quasi-constant DC link voltage.
KIT-CRD-3DD065P
Wolfspeed
KIT-CRD-3DD065P
Evaluate and optimize the steady state and high speed dynamic switching performance of Wolfspeed’s latest (C3M) 650 V SiC MOSFETs and 6th Generation (C6D) 650 V SiC Schottky diodes.
CRD-02AD065N
Wolfspeed
2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET
Reference design offers a highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on Cree’s latest (C3M™) 650 V 60 mΩ SiC MOSFETs.
CRD-06600FF065N
Wolfspeed
6.6 kW High Frequency DC-DC Converter
The demo board consist of a DC-DC LLC topology in which primary side is based on a Full bridge stage while the secondary side is based on an asynchronous rectification stage.