Drive Voltages for GaN and SiC Unipolar and Bipolar Gate Drivers

This Tech Chat addresses the different gate drive levels required for optimal performance of Silicon (Si), Gallium Nitride (GaN) and Silicon Carbide (SiC) technologies. In addition, we discuss the difference between unipolar and bipolar gate drivers and how their configurations vary.

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Energy & Power Tech Chat

Common Mode Transient Immunity

Commode Mode Transient Immunity as it relates to gate drivers is explained in this Tech Chat as well as the minimum gate driver CMTI required for converters integrated with Gallium Nitride (GaN) or Silicon Carbide (SiC) power semiconductors.


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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.