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Paralleling Discrete SiC MOSFETs

When it is not practical to use a power module in your design, paralleling MOSFETs is a common approach. This Tech Chat addresses any special considerations when paralleling silicon carbide MOSFETs.

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Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.