Why negative gate driving voltage? In this Tech Chat, we discuss the different gate drive levels of Wolfspeed Gen3 SiC MOSFETs – how adding negative gate bias improves noise immunity, avoiding false turn-on in a half bridge configuration and the recommendation to use negative voltage for a Totem Pole half bridge topology due to cross-talk.
Wolfspeed & Richardson RFPD Tech Chats Support Successful Integration of Silicon Carbide
Wolfspeed and Richardson RFPD have developed a series of Tech Chats which comprise conversations between engineers on various SiC topics.
Wolfspeed SiC Reliability
With many power designers focusing on silicon carbide device level qualification, reliability and consistency of supply, we delve into how Wolfspeed emphasizes the differences between reliability versus qualification testing.
Benefits of SiC MOSFETs v. Competing Technologies
In this Tech Chat we tackle the question often asked on how Silicon Carbide (SiC) compares versus competing technologies.