The electrification of everything drives the need to improve system performance, reliability, and cost. The limitations of Silicon (Si) devices are driving the adoption of wide bandgap technologies such as Silicon Carbide (SiC) to address these challenges. While SiC offers a number of benefits, it also introduces several design challenges such as electromagnetic interference (EMI), overheating, and overvoltage conditions that can be addressed by selecting the right gate driver.
As SiC technology is widely adopted in medium-and-high-voltage applications, the system design increases complexity and can be more time-consuming, potentially significantly delaying time to market. These challenges are well met with Microchip’s Plug-and-Play mSiC™ Gate Driver family, which is designed as a turnkey solution to “work right out of the box.”
Pradeep Kulkarni, Product Marketing Manager, Silicon Carbide Business Unit, MISUMI
Pradeep Kulkarni is a product marketing manager of Microchip’s Silicon Carbide business unit and is based in Bangalore, India. He leads the marketing efforts for the company’s mSIC™ Gate Drivers. Pradeep has over 13 years experience working with other leading power semiconductor companies in the roles of product management, product marketing and business development. He holds a Bachelor of Engineering in Electronics from Mumbai University and an EMBA in Product Leadership from CMR University.
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