Gate Drive for Silicon Carbide – Getting the Best Performance out of SiC with Proper Gate Drive Solutions

The Silicon Carbide allows for more efficient, smaller, and more capable power conversion systems but getting the most out of these wide-bandgap devices requires intentional selection of everything around the switch.

One of the most important parts of the system is the gate driver. The gate drive solution directly impacts the switching efficiency of the SiC MOSFET as well as can have features to make systems more reliable like Miller Clamp and Short Circuit Protection.

From the protection features available on the market today, to the robustness of isolated gate driver solutions, this training will teach about the intricacies of Silicon Carbide needs in gate drivers, the variety of gate drivers available, and the benefits of the various features that gate drivers can provide to the system designer.

Attendees will learn about:

• Benefits of Silicon Carbide devices in power systems
• Why we need gate drivers for power MOSFETs
• Particulars of driving Silicon Carbide MOSFETs
• Common Mode Transient Immunity
• Sizing the gate driver power supply and how to implement it
• Why certain gate drive voltages are recommended and application considerations
• Benefits of additional gate driver features for system design
• Miller clamping, short circuit protection, fault reporting
• Which gate drivers should be considered depending on the application, including the offering from Analog Devices
• Resources available to design in Silicon Carbide and SiC Gate Drivers.