DOWNERS GROVE, Ill. (February 25, 2026) – Richardson RFPD, Inc., an Arrow Electronics company, announced the expanded availability of Wolfspeed’s Gen 4 Silicon Carbide (SiC) MOSFET platform, engineered to deliver efficiency, simplified switching behavior, and long‑term reliability for today’s most demanding high‑power applications.

Wolfspeed’s Gen 4 technology is designed to improve system‑level performance while reducing design complexity. With devices offered in 750V, 1200V, and 2300V classes, the portfolio supports power modules, discrete components, and bare die formats, giving engineers broad flexibility across industrial, renewable energy, EV charging, UPS, and high‑voltage conversion markets.

Higher Efficiency and Simplified Design

Gen 4 MOSFETs deliver reduced switching losses and support higher switching frequencies, enabling smaller passives and higher power density. Their optimized conduction characteristics reduce losses across the load range—critical for EV traction inverters, industrial motor drives, and AI data‑center power systems.

Proven Reliability and Enhanced Thermal Performance

Built on Wolfspeed’s industry‑leading SiC foundation, Gen 4 devices offer improved robustness and cooler operation. Their compatibility with 15–18V turn‑on and 0V to –5V turn‑off gate‑drive conditions helps ensure easy integration into existing high‑power architectures, while improved Safe Operating Area metrics support harsher environments and longer system lifecycles

Optimized for Real‑World High‑Power Applications

Wolfspeed’s 1200V SiC MOSFET family offers multiple on‑resistance options to help designers balance cost, performance, and efficiency. Hard‑switching applications benefit from lower turn‑on losses and improved Coss linearity, while soft‑switching topologies gain smoother behavior and reduced EMI.

To learn more about Wolfspeed Gen 4 MOSFETs including alternatives for Gen 3 products or to request a sample, please visit the Richardson RFPD website.