Richardson RFPD Announces Powerful New GaN X-band HPA from UMS

Richardson RFPD Announces Powerful New GaN X-band HPA from UMS

CHA8312-99F features 17 W output power and PAE of 50 percent


1950 S. Batavia Avenue, Suite 100
Geneva, IL 60134

P: 630 262 6800

F: 630 262 6850

August 3, 2022 – GENEVA, Ill.: Richardson RFPD, Inc., an Arrow Electronics company, announced today the availability and full design support capabilities for a new gallium nitride high- power amplifier from United Monolithic Semiconductors.

The CHA8312-99F is a two-stage GaN HPA that operates from 8 to 12 GHz and provides 17 W output power, 50 percent power added efficiency, and 26 dB small signal gain. The part is developed on a robust 0.15 μm gate length GaN on SiC HEMT process and is available as a bare die.

The new device is ideal for defense applications and is also suitable for a wide range of microwave applications and systems such as radar, test equipment and communication.


Director, Strategic Marketing
P: 630 262 6800

Additional key features of the CHA8312-99F include:

  • Pout: +42.5 dBm @ +23 dBm input power
  • Input return loss: >17 dB
  • Output return loss: >11 dB
  • DC bias: 20 V @ 320 mA
  • Chip size: 3.99 mm x 3.12 mm x 0.07 mm

To find more information, or to purchase this product today online, visit the CHA8312-99F webpage.

The device is also available by calling 1-800-737-6937 (within North America) or find a local sales engineer (worldwide) at Local Sales Support.

To learn about additional products from United Monolithic Semiconductors, visit our UMS storefront page.

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