What’s New
NXP® Semiconductors Semiconductors has announced its new higher power BTS7202 RX Front End Modules (FEM) and BTS6403/6305 pre-drivers for 5G massive multiple-input multiple-output (MIMO) going up to 20 W per channel. Developed and implemented in NXP’s silicon germanium (SiGe) process, the devices operate with modest current consumption to reduce operational costs for mobile network operators (MNOs). They also offer improved linearity and reduced noise figure to support better 5G signal quality.
Why It Matters
As 5G networks continue to be built out across the globe, MNOs are increasingly leveraging 32T32R solutions to improve massive MIMO coverage in less dense urban and suburban areas. Utilizing 32T32R solutions requires using higher power devices that increase the power level per channel in order to achieve the total power required to ensure strong coverage of the 5G signal.
Related Content
Everything you Need to Achieve Thin 5G mMIMO & Shrink 5G Radios
Achieve smaller, thinner and lighter systems that enable significant cost savings and result in more environmentally friendly base stations, while achieving the full performance benefits of 5G.
Shrink 5G Radios with NXP’s New Top-Side Cooling Modules for RF Power
NXP has introduced a family of 5G massive MIMO modules utilizing its innovative new top-side cooling package technology.
New Wideband RF 125 W CW GaN Transistor from NXP
The new MMRF5018HSR5 wideband RF 125 W CW power transistor is for optimized wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance.
