Devices deliver high power, high PAE and high linearity
The proprietary United Monolithic Semiconductors GH15 GaN process is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms.
Offered in die and plastic QFN packaging, UMS GaN-on-SiC MMIC power amplifiers are available in a variety of power levels to support Ka-band SATCOM uplink and 5G FR2 bands n257, n258, n259 (partial), n260 and n261.
Listed below are the standard available Ka-band MMIC amplifiers. Contact Richardson RFPD for additional information or to request samples or an evaluation board. Customization, advanced packaging and foundry services are also available.
Ka-Band GaN-on-SiC MMIC RF Power Amplifiers from UMS GaN
GaN PA Part Number | Frequency Range (GHz) | Psat (dBm) | Gain (dB) | Efficiency (%) | Drain Voltage (V) | Package Type | CHA6682-98F/00 |  | 24–27.5 | 37 | 25 | 32 | 20 | Die | Learn More |
|---|---|---|---|---|---|---|---|---|---|
CHA8362-99F/00 |  |  | 26.5–31 | 44 | 25 | 30 | 25 | Die | Learn More |
CHA6357-QKB/20 |  | 27–31 | 36 | 28 | 20 | 20 | Plastic SMT | Learn More | |
CHA8262-99F/00 | |  | 27.5–31.5 | 41 | 24 | 25 | 20 | Die | Learn More |
CHA6094-QKB/20 | |  | 35–42.5 | 33 | 26 | 13 | 27 | Plastic SMT | Learn More |
CHA6095-QKB/20 | |  | 35–42.5 | 36 | 25 | 12 | 27 | Plastic SMT | Learn More |
CHA7452-99F/00 |  | 35.5–40.5 | 39.5 | 29 | 24 | 20 | Die | Learn More | |
CHA7453-99F/00 |  | 37.5–41.5 | 39.5 | 28 | 22 | 20 | Die | Learn More | |
CHA7455-99F/00 | | 39.5–42.5 | 39.5 | 32 | 24 | 20 | Die | Learn More |
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