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NXP - A3G26D055NT4
55 W GaN on SiC HEMT

NXP Versatile 55 W GaN on SiC HEMT

This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band, including RF energy and tactical communications.

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