NXP - A3G26D055NT4
55 W GaN on SiC HEMT

NXP Versatile 55 W GaN on SiC HEMT

This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band, including RF energy and tactical communications.

Related Content

RF & Microwave

5G Suppliers in the Spotlight

5G represents the next evolutionary step in wireless telecommunications infrastructure and is poised to deliver dramatic improvements in capacity, bandwidth, and latency.


RF & Microwave Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Richardson RFPD has a team of over 50 technical resources available to provide design assistance on a variety of topics.  Although there are too many to name, we have highlighted specific topics that provide a representation of our support.