This 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 100 to 2690 MHz. This part is characterized and performance is guaranteed for applications operating in the 100 to 2690 MHz band, including RF energy and tactical communications.
Related Content
NXP 5G Solutions
NXP is powering the 5G Access Edge which includes the critical infrastructure equipment between the 5G core and the end-user.
NXP Rx Modules
NXP’s Rx Modules are integrated multi-chip modules designed for TD-LTE and 5G mMIMO applications.
NXP RapidRF Reference Design
RapidRF Front End Designs are ease-of-use solutions to help accelerate prototyping for massive MIMO systems, Open RAN, outdoor small cells, and low power remote radio heads.