The NXP A3G26D055N is a 100-2690 MHz, RF power discrete GaN transistor housed in a DFN 7 x 6.5 over-molded plastic package. Its unmatched output allows wide frequency range utilization.
This sub-6 GHz A3G26D055N device operates in the 2.6 GHz cellular band, at 39 dBm and at 8 W average power. It can be used for 5G massive MIMO radio units (64T64R) as well as for under 1 GHz cellular bands as a driver for macro radio units such as 4T4R antenna systems.
Versatile GaN Solution for Various Markets
2.6 GHz Cellular Band 64t64R 5G mMIMO radio units (39 dBm/8 W average power)
<1 GHz Cellular Bands Driver for macro radio units (ex: 4T4R)
2.45 GHz ISM Band. RF Energy driver for cooking, industrial, heating/welding applications. RF Energy low power final-stage (25 W CW) for medical and industrial applications
100-2800 MHz wideband tactical communications. 25 W CW wideband low power final-stage or driver for MRF5014H/5018H
NXP has introduced a family of 5G massive MIMO modules utilizing its innovative new top-side cooling package technology.