United Monolithic Semiconductors’ CHC6054-QQA RFFE module contains a power amplifier, driver amplifier, low noise amplifier and switch, as well as biasing elements. It typically exhibits an Rx gain of 18 dB with a low noise figure of 3.2 dB and a Tx gain of 28 dB with +31 dBm saturated output power. It features high linearity with an ACPR of -36 dBc @ 23 dBm average Pout.
CHC6054-QQA - Technologies
This new RFFE is manufactured on 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) and 150nm Gallium Arsenide (GaAs). It is provided in a cost-effective plastic QFN 4×5 mm package.
Designed for telecom radio systems applications operating in the 24.25–30.5 GHz frequency range.
Features
Applications
Suitable for telecom radio systems including 5G MIMO in Fixed Wireless Access and Mobile applications.
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Devices deliver high power, high PAE and high linearity in a range of power levels
August 14, 2024
