MACOM delivers a high-performance X-band portfolio with a variety of power levels to optimize system performance, as well as backend support tools to assist in system design and integration.
MACOM’s GaN on SiC solutions are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage, and high power-added efficiency (PAE), MACOM’s solutions support continuous improvements in SWaP-C benchmarks.
Key Benefits
Key Features
X-Band GaN on SiC Solutions
Part Number | Frequency (GHz) | Psat (W) | Gain (dB) | Eff. (%) | Voltage | Device | Package | Eval Board | Notes | CMPA851A005S | 8.5-10.5 | 4.5 | 31 | Request | 28 | MMIC | SMT | N/A | New! Highest Efficiency GaN |
|---|---|---|---|---|---|---|---|---|---|
CGHV1F006S | 8.4-9.6* | 7 | 14.5 | 52 | 40 | Transistor | SMT | Eval Board | *Tuned EVB 8.5-9.6GHz EVB |
CMPA901A020S | 9-10 | 20 | 31 | 45 | 38 | MMIC | SMT | Eval Board | |
CMPA851A012S | 8.5-10 | 20 | 29 | Request | 28 | MMIC | SMT | N/A | New! Highest Efficiency GaN |
CGHV1F025S | 8.9-9.6* | 25 | 11 | 51 | 40 | Transistor | SMT | Eval Board | *Tuned 8.9-9.6GHz EVB |
CGHV1J025D | DC-18 | 25 | 17 | 60 | 40 | Transistor | Die | N/A | |
CMPA601C025F | 6-12 | 25 | 33 | 32 | 28 | MMIC | Flange | Eval Board | |
CMPA801B030F1 | 8-11 | 37 | 21 | 44 | 40 | MMIC | Flange | Eval Board | |
CMPA801B030S | 7.9-11 | 40 | 20 | 40 | 28 | MMIC | SMT | Eval Board | Also avail in die |
CMPA901A035F | 9-10 | 40 | 34 | 35 | 28 | MMIC | Flange | Eval Board | |
CMPA851A025S | 8.5-10 | 40 | 29.5 | Request | 28 | MMIC | SMT | Eval Board | New! Highest Efficiency GaN |
CGHV96050F2 | 7.9-11 | 50 | 10 | 55 | 40 | IMFET | Flange | Eval Board | 50 Ohm I/O Match. Test board without device avail |
CMPA851A050F | 8.5-10.5 | 50 | 29 | Request | 28 | MMIC | SMT | Eval Board | New! Highest Efficiency GaN |
CGHV1J070D | DC-18 | 70 | 17 | 60 | 40 | Transistor | Die | N/A | Characterized at 10 GHz. |
CMPA851A050S | 8.5-10.5 | 80 | 29 | Request | 28 | MMIC | SMT | Eval Board | New! Highest Efficiency GaN |
CGHV96100F2 | 7.9-9.6 | 100 | 10 | 45 | 40 | IMFET | Flange | Eval Board | 50 Ohm I/O Match. Test board without device avail |
CGHV96130F | 8.4-9.6 | 130 | 7.5 | 42 | 40 | IMFET | Flange | Eval Board | 50 Ohm I/O Match |
Additional Resources
- Request Amplifier Lineup
Reach out to one of our field sales engineers and find the right MACOM X-band amplifier lineup to fit your requirements.
- Request MACOM Nonlinear Models
On the RF Portal, qualified registrants can download MACOMs large-signal simulation models, which can help in designing amplifier modules.
- Article: High Power AESA Radar Designs
Gallium nitride (GaN), when implemented on a Silicon Carbide (SiC) substrate, is especially suitable for high-power applications like radar.
