Designers of high-voltage systems are turning to silicon carbide for its intrinsic temperature and switching performance behaviors across a growing list of power electronics applications. Engineers often face multi-faceted system design requirements, including the need for multi-sourced packages capable of supporting tight power density constraints with limited thermal dissipation design possibilities.
Wolfspeed is now expanding system design options by commercially releasing a well-known top-side cooled package to both automotive and industrial markets. As a drop-in replacement for MOSFETs produced by other suppliers, the U2 package enables procurement flexibility for established designs with improved package creepage to support designs from 650 V – 1200 V.
Related Content
Richardson RFPD Introduces Wolfspeed Gen 4 MOSFETs Delivering Next-Generation Efficiency and Real-World Performance
We’re excited to expand access to Wolfspeed’s Gen 4 SiC MOSFET platform—delivering higher efficiency, easier…
Wolfspeed Gen 4 MOSFETs: Powering Real-World Performance with Next-Gen Efficiency
Wolfspeed has unveiled its Gen 4 technology platform—engineered to deliver breakthrough performance, durability, and efficiency for high-power applications.
2300 V Three-Phase Inverter from Wolfspeed
The 2300 V three-phase inverter reference design demonstrates the design simplicity and scalability of Wolfspeed’s new 2300 V baseplate-less SiC power modules.
