GD3160 Half-Bridge Evaluation Kit
NXP GD3160 Half-Bridge Evaluation Kit

NXP GD3160 Half-Bridge Evaluation Kit


The FRDMGD3160HBIEVM is a half-bridge evaluation kit populated with two GD3160 single channel IGBT/SiC MOSFET gate drive devices. The kit includes the Freedom KL25Z microcontroller hardware for interfacing a PC installed with Flex GUI software for communication to the SPI registers on the MC33GD3160 gate drive devices in either daisy chain or standalone configuration.

The GD3160 translator board is used to translate 3.3 V signals to 5.0 V signals between the MCU and GD3160 gate drivers. The evaluation kit is designed to connect to a single phase of a Hybrid Pack IGBT or SiC MOSFET module for half-bridge evaluations and applications development.

Related Content

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.