Hitachi Energy

New LoPak for 1200V Applications

Familiar package for higher power ratings
1200 V LoPak Modules from Hitachi

1200 V LoPak Modules from Hitachi

The new 1200 V LoPak modules carry the same DNA for high reliability and robustness as the entire family of Hitachi Energy Power Grids’ high-power semiconductors.

Building on its experience of high-performance, high-reliability devices for voltages above 3.3 kV, Hitachi Energy Power Grids has expanded its product portfolio by introducing a family of 1200 V power modules to complement the existing 1700 V family, starting with a 1200 V, 900 A x 2 module using an upgraded LoPak module package.

New LoPak for 1200V Applications

Part Number
Voltage (V)
Current (A)
Configuration
5SNG0900R120500
1200
900
Phase Leg
5SNG0900R120590
1200
900
Phase Leg
5SNG0600R120500
1200
600
Phase Leg
5SNG0600R120590
1200
600
Phase Leg

For the active Front End, or machine-side converter, that connects the DC-link to the motor, Hitachi Energy Power Grids’ LoPak modules are a popular choice. Even at lower voltages, engineers not only want to create new inverter designs but would also like the ability to upgrade their existing designs to handle higher power using the same module package. This allows a faster time-to-market, less disruption of manufacturing lines, and potentially lower unit costs.

These new modules feature the next generation of ultra-low-loss, rugged Trench IGBT technology used to fabricate the silicon switch and optimized diodes.

Typical applications include wind power converters, variable speed drives, power supplies, power quality, UPS and renewable energies.

Special treated Cu-baseplate, controlled bow and reduced airgap to heat sink.

Spacers for substrate solder, homogeneous solder thickness and less delamination.

Press-fit auxiliary connections, press-fit auxiliary pins allow a solder-free connection to the gate-driver PCB.

Copper wire bonds for high current terminal and substrate inter-connects.

Maximum junction temperature
of 175 °C.

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.