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New BM3 Half-Bridge Module with Schottky Diodes

For Higher Frequency Industrial Applications
RFPD
62 mm BM3 Silicon Carbide Half-Bridge Power Modules

62 mm BM3 Silicon Carbide Half-Bridge Power Modules

Wolfspeed’s BM3 power module platform provides the system benefits of Silicon Carbide (SiC) while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62 mm BM3 package enables high speed Silicon Carbide switching benefits and increased system efficiency, due to the low-inductance layout.

The BM3 platform is a perfect fit for high frequency industrial applications such as induction heating, rail and traction, motor drives, and EV charging infrastructures.

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  • Features
  • Industry-leading, reliable Silicon Carbide MOSFET technology in robust, well-established 62mm form factor
  • Strong thermal performance + material selections optimized for industrial and harsh environment applications
  • Low-inductance design (10–15 nH) for fast switching with low power losses
  • MOSFET die and selected modules qualified to HV-H3TRB
  • Benefits
  • Broad portfolio of current and voltage ratings available to fit diverse industrial application requirements
  • Fast time-to-market with minimal development required for transition from 62 mm IGBT packages
    Reduced cooling requirements & overall system cost
  • Optimized internal layout for low power losses & minimal overshoot for maximum voltage utilization
  • Applications
  • Induction heating
  • Motor drives
  • Energy generation / Smart grids / Smart energy
  • Railway
  • EV fast charging
  • UPS and SMPS
Part Number
Blocking Voltage (V)
Current Rating
Rds(on)
at 25°C
Maximum Junction Temperature
Module Size
WAS175M12BM3
1200 V
175 A
8 mΩ
150 °C
106 x 62 x 30 mm
CAS175M12BM3
1200 V
175 A
8 mΩ
150 °C
106 x 62 x 30 mm
WAB300M12BM3
1200 V
300 A
4 mΩ
175 °C
105 x 62 x 31 mm
WAS350M12BM3
1200 V
350 A
4 mΩ
150 °C
106 x 62 x 30 mm
CAS350M12BM3
1200 V
350 A
4 mΩ
150 °C
106 x 62 x 30 mm
WAB400M12BM3
1200 V
400 A
3.25 mΩ
175 °C
105 x 62 x 31 mm
CAB530M12BM3
1200 V
530 A
2.6 mΩ
175 °C
106 x 62 x 30 mm
WAS530M12BM3
1200 V
530 A
2.67 mΩ
150 °C
106 x 62 x 30 mm
CAS530M12BM3
1200 V
530 A
2.67 mΩ
150 °C
106 x 62 x 30 mm

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.