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Microsemi SiC Schottky Diode Modules
From Microsemi | Microchip

700V & 1200V SiC Diode Modules from Microchip

Microsemi SiC Schottky diode modules offer industry-leading integration and package. Shrink system size and weight, while reducing total system costs.

  • Essentially zero forward and reverse recovery = reduced switch and diode switching losses
  • Temperature independent switching behavior = stable high temperature performance
  • Positive temperature coefficient of VF = ease of parallel operation
  • Usable 175oC junction temperature = safely operate at higher temperatures

Microsemi Featured Products

Part Number
Configuration
VDS (V) VCE (V) VRRM (V)
Rds(on) (mW) VCEsat (V) VF (V)
Current (A) Tc=80 C
Package
MSCDC200H120AG
Full Bridge
1200
1.5
200
SP6C
MSCDC50H1201AG
Full Bridge
1200
1.5
50
SP1
MSCDC600A120AG
Phase leg
1200
1.5
600
SP6C
MSCDC200A120D1PAG
Phase leg
1200
1.5
200
D1P
MSCDC200KK120D1PAG
Dual Common Cathode
1200
1.5
200
D1P
MSCDC50X1201AG
3 phase bridge
1200
1.5
50
SP1
MSCDC200H70AG
Full Bridge
700
1.5
200
SP6C
MSCDC50H701AG
Full Bridge
700
1.5
50
SP1
MSC50DC70HJ
Full Bridge
700
1.5
50
SOT227
MSCDC600A70AG
Phase leg
700
1.5
600
SP6C
MSCDC200A70D1PAG
Phase leg
700
1.5
200
D1P
MSCDC200KK70D1PAG
Dual Common Cathode
700
1.5
200
D1P
MSCDC50X701AG
3 phase bridge
700
1.5
50
SP1

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About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.