Innoscience’s ISG3201 is a complete half-bridge circuit that includes two 100 V, 3.2 mΩ InnoGaN HEMTs and the required driver circuitry in an LGA package measuring just 5×6.5×1.1mm.
The ISG3201 has a 34 A continuous current capability, zero reverse recovery charge, and ultra-low on resistance. Thanks to the high level of integration, gate loop and power loop parasitics are kept below 1 nH. As a result, voltage spikes on switching nodes are minimized. The turn-on speed of the half-bridge GaN HEMTs can be adjusted using a single resistor.
ISG3201 - Key Features
VDS,max | 100 V |
RDS(on),max | 3.2 mΩ + 3.2 mΩ |
QG,typ | 9.2 nC + 9.2 nC |
ID,Pulsed | 230 A |
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