In-Stock: Innoscience - INN100W032A​

A GaN on SiC enhancement-mode HEMT in solder bar WLCSP with 3.5 x 2.13 mm package size.
RFPD
INN100W032A – 100V Enhancement-Mode GaN Power Transistor

INN100W032A – 100V Enhancement-Mode GaN Power Transistor

The INN100W032A is a 100 V enhancement-mode GaN power transistor for Class D audio, high-frequency DC-DC converters, motor drives and more.

Innoscience delivers exceptional performance, reliability and durability—ensuring high-quality results every time.

Order / Learn More
Ask an Engineer

INN100W032A - Innoscience

A GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Solder Bar WLCSP with 3.5 mm x 2.13 mm package size.
VDS,max
100V
RDS(on)Max
3.2mΩ
RDS(on)Typ
2.4mΩ

Features

  • GaN on SiC E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small package size
  • Zero reverse recovery charge

    • Applications

  • Synchronous rectification
  • Class-D audio
  • High frequency DC-DC converter
  • Communication base station
  • Motor driver

    • Related Content

    Energy & Power Design Support

    Allow us an opportunity to assess your project and help bring your vision to market faster.

    Ask an Expert

    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.