In-Stock: Innoscience INN100W032A​

A GaN on Silicon enhancement-mode HEMT in solder bar WLCSP with 3.5 x 2.13 mm package size
INN100W032A: 100 V Enhancement-Mode GaN Power Transistor 

INN100W032A: 100 V Enhancement-Mode GaN Power Transistor 

The INN100W032A is a 100 V enhancement-mode GaN power transistor for Class D audio, high-frequency DC-DC converters, motor drives and more.

Innoscience delivers exceptional performance, reliability and durability—ensuring high-quality results every time.

INN100W032A - Innoscience

A GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Solder Bar WLCSP with 3.5 mm x 2.13 mm package size.

VDS,max
100V
RDS(on)Max
3.2mΩ
RDS(on)Typ
2.4mΩ

Features

  • GaN on SiC E-mode HEMT technology
  • Very low gate charge
  • Ultra-low on resistance
  • Very small package size
  • Zero reverse recovery charge
  • Applications

  • Synchronous rectification
  • Class-D audio
  • High frequency DC-DC converter
  • Communication base station
  • Motor driver
  • Related Content

    Energy Storage and Power Conversion

    PCIM 2024

    Explore products and solutions highlighted at our booth during PCIM 2024.

    LEARN MORE »

    Energy & Power Design Support

    Allow us an opportunity to assess your project and help bring your vision to market faster.

    About our Team of Experts

    Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.