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EV Charger Solutions
Faster, Smaller, More Efficient

Enhance your EV Charger

Enhance your EV Charger with SiC MOSFET-based Flow E Power Modules

The new flow DUAL SiC E1 and fastPACK SiC E1/E2 have been developed with the aim to make the EV offboard charger designs faster, smaller and more efficient. The modules are based on latest 650V and 1200V SiC MOSFET chip generations with an on-resistance as low as 5mOhm.

In addition to optimizing performance, Vincotech puts focus on reliability. With the new advanced die-attach technology, the new flow E SiC MOSFET-based modules can extend the power cycling lifetime by a factor of 2. Vincotech has been empowering customers’ ideas for 20+ years now. Their experience and SiC-based power modules paired with your designs give the best possible result!

Target applications include: UPS & Gensets, Energy Storage Systems, Industrial Charging Systems, EV Automotive Off-Board Chargers, and Solar Inverters.

  • Factor 2 improved power cycling capability for longer lifetime
  • Multi-sourced SiC-components for more freedom of choice and less supply chain risk
  • Optional integrated capacitors for improved EMC performance
  • Press-fit pins and pre-applied TIM to help reduce production cost
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Vincotech Featured Products

Part Number
Breakdown Voltage (V)
Nominal Chip Current Rating (A)
Rds(on) (mΩ)
Topology
Module Housing
Footprint (mm)
Height (mm)
10-EY122PA005ME-LU39F08T
1200
240
5
Half-bridge
flow E2
62.8×57.7
12
10-EY122PA008ME-LU38F08T
1200
240
8
Half-bridge
flow E2
62.8×57.7
12
10-EY124PA016ME-LP49F18T
1200
80
16
H-bridge
flow E2
62.8×57.7
12
10-EZ074PA021UF01-LQ18F98T*
650
50
21
H-bridge
flow E1
62.8×34.8
12
10-EZ124PA032ME-LQ17F18T*
1200
40
32
H-bridge
flow E1
62.8×34.8
12

*In qualification

Energy & Power Design Support

Allow us an opportunity to assess your project and help bring your vision to market faster.

About our Team of Experts

Our team of global applications engineers are available to answer your questions to ensure your power conversion or energy storage system design meets your performance expectations. If you’re transitioning from silicon to gallium nitride (GaN) or silicon carbide (SiC), we’ll help identify the right switching device to achieve the power density and increased efficiency your application requires.