Microchip 3.3 kV SiC Power Devices
Enabling new levels of efficiency and reliability
Microchip’s SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip’s proven SiC reliability also ensures no performance degradation over the life of the end equipment.
- Gate Oxide Integrity
- Rock-solid thereshold voltage
- Lifetimes > 100 years
- Robust Body Diode
- Degration-free
- Eliminate freewheeling Schottky
- Avalanche Rugged
- Stable performance after 100K pulses
- Optimized cost and efficiency
- "IGBT-Like" Short Circuit Performance
- Stable performance after 100K pulses
- Optimized cost and efficiency
- What Problem Are We Solving?
- 3.3 kV Silicon IGBTs are limited in performance (Slow with high switching losses)
- Eliminate design compromises, reduce design complexity and lower system costs with 3.3 kV SiC
- Take advantage of SiC technology: reduce size, weight and losses with higher switching frequency capability
- Limited suppliers of 3.3 kV SiC products
- Target Applications
- Rail Traction Power Units (TPU) and Auxiliary Power Units (APU)
- Medical imaging power supplies
- SemiCap (Semiconductor Capital equipment)
- Renewable energy/grid
- Industrial motor drives
- Aerospace and defense power distribution
3.3 kV SiC MOSFETs and Diodes
Device Type | Part Number (V) | Voltage (V) | Rds(on) (mΩ) | Current (A) | Package Type | SiC MOSFET | MSC025SMA330B4 | 3300 | 25 | 104 | TO-247-4L |
|---|---|---|---|---|---|
SiC MOSFET | MSC080SMA330B4 | 3300 | 80 | 43 | TO-247-4L |
SiC MOSFET | MSC400SMA330B4 | 3300 | 400 | 8 | TO-247-4L |
SiC SBD | MSC030SDA330B | 3300 | – | 30 | TO-247-2L |
SiC SBD | MSC090SDA330B2 | 3300 | – | 90 | T-MAX (-2L) |